Site-specific fragmentation caused by Si:2p core-level photoionization of F3SiCH2CH2Si(CH3)(3) vapor was studied by means of high-resolution energy-selected-electron photoion-photoion triple-coincidence spectroscopy. The ab initio molecular orbital method was used for the theoretical description. F3SiCH2CH2+-Si(CH3)(3)(+) ion pairs were produced by the 2p photoionization of the Si atoms bonded to the three methyl groups, and SiF+-containing ion pairs were produced by the 2p photoionization of the Si atoms bonded to the three F atoms.
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