4.6 Article

Physical modeling of temperature coefficient of resistance for single- and multi-wall carbon nanotube interconnects

期刊

IEEE ELECTRON DEVICE LETTERS
卷 28, 期 2, 页码 135-138

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.889240

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conductivity; interconnections; modeling; molecular electronics; quantum wires; temperature

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Equivalent circuit models are presented for the resistance of single- and multi-wall carbon nanotubes (MWCNs) that capture various electron-phonon scattering mechanisms as well as changes in the number of conduction channels as a function of temperature. For single- and few-wall nanotubes, the temperature coefficient of resistance (TCR) is always positive and increases with length. It reaches 1/(T - 200 K) for lengths much larger than the electron mean free path, where T is the temperature in kelvin. For MWCNs with large diameters (> 20 nm), TCR varies from - 1/T to +0.66/ (T - 200 K) as the length varies from zero to very large values.

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