Improved properties of Al-doped ZnO film by electron beam evaporation technique

High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 degrees C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 degrees C. Finally, the maximum electrical resistivity of 2.5 x 10(-4)Omega cm and optical transmittance of more than 85% has been found at 200 degrees C growth temperature, which explains its relation with the crystal quality of the film. (c) 2006 Elsevier Ltd. All rights reserved.