High power and high external efficiency m-plane InGaN light emitting diodes

High power and high efficiency nonpolar m-plane (1100) nitride light emitting diodes (LEDs) have been fabricated on low extended defect bulk m-plane GaN substrates. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. The output power and external quantum efficiency (EQE) of the packaged 300 x 300 mu m(2) was 23.7 mW and 38.9%, respectively, at 20 mA. The peak wavelength was 407 nm and < 1 nm redshift was observed with change in drive current from 1-20 mA. The EQE shows a minimal drop off at higher currents.