期刊
PHYSICA SCRIPTA
卷 75, 期 2, 页码 219-226出版社
IOP PUBLISHING LTD
DOI: 10.1088/0031-8949/75/2/017
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The direct current electrical conductivity of ternary 40TeO(2)-(60- x) V2O5 - xMoO(3) glasses prepared by press-melt quenching technique was studied at temperatures between 90 and 403 K. From the conductivity - temperature relation, it was found that the small polaron hopping (SPH) model was applicable at the temperature above Theta(D)/2 (Theta(D): the Debye temperature), and the electrical conduction was due to the non-adiabatic SPH of electrons between vanadium ions for all glasses. The hopping carrier mobility and carrier density were determined at different temperatures. At temperatures lower than Theta(D)/2, a T-1/4 dependence of the conductivity was found, which can be described by the variable-range hopping (VRH) conduction mechanism. The density of states at ( or near) the Fermi level, N(E-F), was found from Mott parameters analysis, which was a function of V2O5 content. All the semiconducting glass compositions exhibited a crossover from VRH to SPH conduction at a characteristic temperature T-R >= Theta(D/2).
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