High contrast reflection modulation near 1.55μm in InP 2D photonic crystals on silicon wafer

We report on reflection modulation results near 1.55 mu m in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 mu J/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography. (c) 2006 Optical Society of America.