Nitrogen doping of ZnTe and its influence on CdTe/ZnTe interfaces

The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of rho=0.04 Omega cm was found. The valence band offset of the CdTe/ZnTe interface is E-VBO=0.05 eV. (c) 2007 American Institute of Physics.