Electrostatic force microscopy (EFM) was used to obtain highly spatially resolved spectroscopic and image information of semiconductor surface region. EFM with x-ray source (X-EFM) can probe x-ray induced photoionization of near surface electron trapping. The X-EFM signal dependent on x-ray photon energy results in nanometer scale x-ray absorption spectra. Furthermore, probing tip scanning at fixed x-ray photon energy provides chemical states imaging of the trapping. The authors demonstrate characterization of substoichiometric chemical oxidation of a Si surface with less than 1 nm spatial resolution. (c) 2007 American Institute of Physics.
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