期刊
ADVANCED MATERIALS
卷 19, 期 3, 页码 371-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601792
关键词
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An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.
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