期刊
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 53, 期 9, 页码 2398-2401出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201310260
关键词
boron; doping; field effect transistors; graphene; nitrogen
资金
- Mid-Career Researcher (MCR) program
- BK21 Plus program
- Basic Science Research (BSR) program
- Converging Research Center (CRC) program
- Basic Research Laboratory (BRL) program
- National Research Foundation (NRF) of Korea
- US Air Force Office of Scientific Research through the Asian Office of Aerospace RD (AFOSR-AOARD)
Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N-2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66atom%, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.
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