4.8 Article

Continuous c-oriented AlPO4-5 films by tertiary growth

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CHEMISTRY OF MATERIALS
卷 19, 期 4, 页码 792-797

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AMER CHEMICAL SOC
DOI: 10.1021/cm0622295

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  1. Division Of Materials Research
  2. Direct For Mathematical & Physical Scien [0754792] Funding Source: National Science Foundation

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c-Oriented AlPO4-5 films were synthesized by seeded growth on silicon substrates. Secondary hydrothermal treatment of the seeded substrates under conditions that favor c-out-of-plane growth yielded non-intergrown, highly oriented columnar crystals with a length of 7 mu m. Modifying the conditions so that in-plane growth is favored and executing yet another (tertiary) growth, the crystals obtained by secondary treatment were grown in-plane, along the a-, b-directions, filling the gaps between the columnar grains and yielding well-intergrown, highly oriented, continuous AlPO4-5 films. The oriented films obtained by the technique presented here can be potentially useful for separations and catalysis as well as electronic and electrochemical applications.

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