期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 40, 期 4, 页码 R75-R92出版社
IOP Publishing Ltd
DOI: 10.1088/0022-3727/40/4/R01
关键词
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The emerging field of strained-Si based nanomembranes is reviewed, including fabrication techniques, strain-induced band structure engineering, electronic applications and three-dimensional membrane architectures. Elastic strain sharing between thin heteroepitaxial Si and SiGe films, enabled by techniques that allow release of these films from a handling substrate, creates a new material: freestanding, single-crystal, strained nanomembranes. These flexible nanomembranes are virtually dislocation-free and have many potential new applications. Strain engineering also provides opportunities for massively parallel self-assembly of a wide variety of three-dimensional nanostructures.
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