期刊
THIN SOLID FILMS
卷 515, 期 7-8, 页码 3580-3583出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.11.006
关键词
indium tin oxide; two-step process; electrical and optical properties
类别
资金
- National Research Foundation of Korea [R15-2004-024-01001-0, R01-2004-000-10195-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The optical and electrical properties of indium tin oxide (ITO) thin films deposited using a pulsed laser deposition at room temperature can be substantially enhanced by adopting a two-step process. X-ray diffraction patterns and atomic force microscopy images were used to observe the structural properties of the films. High quality ITO films grown by two-step process could be obtained with the resistivity of 3.02 x 10(-4) mu cm, the carrier mobility of 32.07 cm(2)/Vs, and the transparency above 90% in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size. (c) 2006 Elsevier B.V. All rights reserved.
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