Reduction in operation voltage of complementary organic thin-film transistor inverter circuits using double-gate structures

The authors have fabricated organic inverters comprising p-type pentacene and n-type fluoroalkyl naphthalenetetracarboxylic di-imide thin-film transistors (TFTs). The TFTs have double-gate structures that independently control the threshold voltage of the p- and n-type TFTs. The mobilities of the p- and n-type transistors are 0.18 and 0.09 cm(2)/V s, respectively. Both the as-manufactured p- and n-type TFTs exhibit depletion-type behavior, which can be changed to enhancement-type behavior by applying a voltage bias to the top-gate electrodes. By controlling the top-gate biases, the operation voltage of the organic inverter circuits can be systematically reduced to 5 V. (c) 2007 American Institute of Physics.