期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 129, 期 8, 页码 2224-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja068429z
关键词
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A facile three-step synthetic procedure for highly pi-extended heteroarenes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2',3'-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV-vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO-LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm(2) V-1 s(-1), respectively.
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