Spin-filtering effect of ferromagnetic semiconductor La2NiMnO6

Ferromagnetic semiconductor La2NiMnO6 was used as a barrier in a tunneling junction. The junction with a ferromagnetic electrode showed magnetoresistance (MR) of -0.12% at 150K associated with the relative orientation of magnetization of the ferromagnetic layers. The result is interpreted as a spin-filtering effect, which is caused by the spin-dependent barrier height of the ferromagnetic tunneling barrier. (c) 2006 Elsevier B.V. All rights reserved.