期刊
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷 310, 期 2, 页码 1975-1977出版社
ELSEVIER
DOI: 10.1016/j.jmmm.2006.11.007
关键词
magnetoresistance; spin filter; spin-dependent transport; La2NiMnO6; magnetic tunnel barrier
Ferromagnetic semiconductor La2NiMnO6 was used as a barrier in a tunneling junction. The junction with a ferromagnetic electrode showed magnetoresistance (MR) of -0.12% at 150K associated with the relative orientation of magnetization of the ferromagnetic layers. The result is interpreted as a spin-filtering effect, which is caused by the spin-dependent barrier height of the ferromagnetic tunneling barrier. (c) 2006 Elsevier B.V. All rights reserved.
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