4.7 Article

Solid state diffusion in Cu-Sn and Ni-Sn diffusion couples with flip-chip scale dimensions

期刊

INTERMETALLICS
卷 15, 期 3, 页码 396-403

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ELSEVIER SCI LTD
DOI: 10.1016/j.intermet.2006.08.003

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intermetallics, miscellaneous; diffusion; scanning tunneling electron microscope; electron microprobe

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The formation and growth rate of intermetallics of frequently used metallisation systems for flip-chip bumping have been studied and are reported for many years. However, no data are available on diffusion couples with flip-chip processing methods and actual flip-chip scale dimensions. In this paper, the interdiffusion coefficients and activation energies of Cu-Sn and Ni-Sn intermetallic formations are measured on flip-chip bumps with 40 mu m bond pad diameter. Also the morphology of the metallurgical reactions is described. Furthermore, the ideal case of a binary diffusion system is seldom present in real-life. In practice, the presence of additional alloying elements has an impact on the intermetallic stoichiometry and even on intermetallic growth and morphology. It is shown that small quantities of Cu in a Ni-Sn system can have a beneficial effect on the Ni consumption but larger quantities result in extreme scalloping of the intermetallic interface. (c) 2006 Published by Elsevier Ltd.

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