期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 19, 期 5-8, 页码 577-579出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2007.894103
关键词
GaN; integrated optics; laser diodes; light deflectors; surface emission; total internal reflection (TIR)
We report on the demonstration of a GaN-based surface-emitting laser (SEL) in a folded-cavity (FC) scheme. Two 45 degrees-angled sidewall deflectors were monolithically integrated at both the edges of an otherwise conventional InGaN multiple-quantum-well edge-emitting laser structure. Despite a low effective mirror reflectivity of R(< 1%), the optically pumped broad-area laser structure produced laser oscillation in the vertical direction with a low threshold pump intensity of similar to 350 kW/cm(2). Computer simulations on the FC, which was based on the finite-difference time-domain method, not only quantified the cavity quality of our FC-SEL device but also suggested methods to lower the laser threshold.
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