期刊
EUROPEAN PHYSICAL JOURNAL D
卷 41, 期 3, 页码 557-561出版社
SPRINGER
DOI: 10.1140/epjd/e2006-00250-8
关键词
-
We propose a simple but practical scheme to implement a three-qubit Toffoli gate by a single resonant interaction in a trapped ion system. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the phase gate can be implemented by only a single resonant interaction of the trapped ions with the first lower vibrational sideband mode. Both the situations, with and without spontaneous ionic emission, are investigated. Discussions are made for the advantages and the experimental feasibility of our scheme.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据