Toffoli gate made from a single resonant interaction with a trapped ion system

We propose a simple but practical scheme to implement a three-qubit Toffoli gate by a single resonant interaction in a trapped ion system. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the phase gate can be implemented by only a single resonant interaction of the trapped ions with the first lower vibrational sideband mode. Both the situations, with and without spontaneous ionic emission, are investigated. Discussions are made for the advantages and the experimental feasibility of our scheme.