4.3 Article Proceedings Paper

Synthesis, characterization, and properties of fully aliphatic polyimides and their derivatives for microelectronics and optoelectronics applications

期刊

MACROMOLECULAR RESEARCH
卷 15, 期 2, 页码 114-128

出版社

SPRINGER
DOI: 10.1007/BF03218762

关键词

aliphatic polyimide; polyimidosiloxane; dielectric constant; electro-optic applications; charge transfer complex

资金

  1. National Research Foundation of Korea [R01-2003-000-10020-0, R11-2000-070-08002-0, R0A-2003-000-10369-0, 2006-311-D00422] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Polyimides are one of the most important classes of polymers used in the microelectronics and photoelectronics industries. Because of their high thermal stability, chemical resistance, and good mechanical and electric properties, polyimides are often applied in photoresists, passivation and dielectric films, soft print circuit boards, and alignment films within displays. Recently, fully aliphatic and alicyclic polyimides have found applications as optoelectronics and inter layer dielectric materials, due to their good transparencies and low dielectric constants (E). The low molecular density, polarity and rare probability of forming inter- or intra-molecular charge transfers, resulting in lowering of the dielectric constant and high transparency, are the most striking characteristics of aliphatic polyimide. However, the ultimate end use of polyimides derived from aliphatic monomers is in their targeted applications that need less stringent thermal requirements. Much research effort has been exerted in the development of aliphatic polyimide with increased thermal and mechanical stabilities, while maintaining their transparencies and low dielectric constants, by the incorporation of rigid moieties. In this article, the recent research process in synthesizing fully aliphatic polyimides, with improved dimensional stability, high transparency and low c values, as well as the characterizations and future scope for their application in micro electric and photo-electronic industries, is reviewed.

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