期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2006.11.084
关键词
ion scattering from surfaces; charge transfer; electronic excitation and ionization of atoms; metallic surfaces; semiconducting surfaces
High-resolution medium energy ion scattering (MEIS) spectroscopy has unveiled fine structures of surfaces and interfaces. However, problematic issues arise due to its excellent energy resolution. In particular, when one uses He+ beams, the He+ fraction eta(+)(1) for the scattering component from top-layer atoms is frequently non-equilibrated owing to short exit path length. This leads to significant uncertainties of the absolute amount of atoms located on top of a surface. To overcome this difficulty, it is essential to acquire reliable data of equilibrium and non-equilibrium charge fractions and also to model the charge exchange process based on a simple picture. In this paper, we analyze the MEIS spectra from single and poly crystals of Si, Ni and Cu together with c-axis oriented graphite and derive electron capture (sigma(10)) and loss (sigma(01)) cross sections dependent on emerging ion velocity. Here, we assume that a He ion when arrives at a Maffin-tin sphere after a large angle collision takes the He+ state and then undergoes many charge exchanging collisions with valence electrons until leaving an electronic surface. The velocity dependent sigma(10) and sigma(01), values derived well reproduce equilibrium and non-equilibrium charge fractions of He+ except for graphite and poly-crystal Si at relatively large emerging angles. Such a deviation comes from the markedly anisotropic distributions of the valence electrons of Si and graphite with strong covalent bonds. (c) 2006 Elsevier B.V. All rights reserved.
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