期刊
JOURNAL OF CRYSTAL GROWTH
卷 300, 期 1, 页码 130-135出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2006.11.005
关键词
nucleation; growth from vapor; single crystal growth; nitride; semiconducting III-V material
The present study focused on understanding the formation of needle-like and columnar structures by investigating the initial nucleation of aluminium nitride (AlN) on SiC substrates with SEM, AFM, and XRD. The grown AlN consisted of high concentration (similar to 8 x 10(4)cm(-2)) hexagonal hillocks (HHs) that originate from threading dislocations in the substrate. The KOH etching technique has been used to examine the origin and formation process of HHs and defect reduction in the grown AlN crystals. A model is introduced to explain the AIN HH formation. The SEM result shows that the AIN columnar structure was formed by merging of needles, which are grown exactly on completed AIN HHs, followed by a lateral growth. (c) 2006 Elsevier B.V. All rights reserved.
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