期刊
ADVANCED MATERIALS
卷 19, 期 5, 页码 688-692出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200600929
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The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.
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