The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here the authors present a method which provides patterning induced anisotropy that not only can be applied locally but also dominates over the intrinsic material anisotropy at all temperatures. (c) 2007 American Institute of Physics.
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