Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence

We report on the fabrication of highly uniform hexagonal nanopillars with single InGaAs/GaAs quantum wells (QW) on GaAs( 111) B substrate by selective-area metal-organic vapour phase epitaxy. The standard size deviation of the fabricated nanopillars with single InGaAs/GaAs QW is about 2% and the standard deviation in their height about 5%. With a decrease in temperature, the peak position shifts to shorter wavelength, the peak intensity increases and the peak width decreases. The calculated well width based on the finite square potential well model taking account of the strain effect and the piezoelectric effect is smaller than the value determined from the growth rate and the growth time, which is mainly due to indium segregation and its incorporation into the subsequent GaAs layer grown at the higher temperature.