Photonic-crystal surface-emitting laser near 1.55 μm on gold-coated silicon wafer

An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 mu m is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 mu J/cm(2).