期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 138, 期 2, 页码 180-183出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2007.01.005
关键词
InGaN/GaN MQW; light-emitting diode (LED); short-period superlattice (SPSL)
Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance. (c) 2007 Elsevier B.V. All rights reserved.
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