期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 122, 期 2, 页码 596-599出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2006.07.004
关键词
diamond film; surface electronic properties; field effect transistor; pH sensor; semiconductor-electrolyte interface
Ion-sensitive field-effect transistors (ISFET) are fabricated using intrinsic hydrogen-terminated mono-crystalline diamond films. Transistor properties are realized by a surface conductive channel on hydrogen-terminated diamond. The gating is realized by immersing the diamond surface into electrolyte solution which is contacted by a platinum electrode. Hydrogen termination of diamond surface acts as a gate insulation without any additional oxide layer. The response of gate potential to pH is about -56 mV/pH. The results are discussed in terms of transfer doping mechanism, Nernst equation, and electrochemical properties of diamond surfaces. They are also compared with ISFETs which employ ion-sensitive gate oxides. (c) 2006 Elsevier B.V. All rights reserved.
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