High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8x10(11) cm Hz(1/2)/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 mu m and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7x10(7) cm Hz(1/2)/W. (c) 2007 American Institute of Physics.