期刊
APPLIED PHYSICS LETTERS
卷 90, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2716994
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资金
- Engineering and Physical Sciences Research Council [EP/C543513/1, EP/C535553/1] Funding Source: researchfish
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.
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