Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.