期刊
ELECTRONICS LETTERS
卷 43, 期 7, 页码 422-423出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20073475
关键词
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Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage.
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