4.6 Article

Ab initio time-domain study of phonon-assisted relaxation of charge carriers in a PbSe quantum dot

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JOURNAL OF PHYSICAL CHEMISTRY C
卷 111, 期 12, 页码 4871-4878

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AMER CHEMICAL SOC
DOI: 10.1021/jp0669052

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The phonon-induced relaxation dynamics of charge carriers in a PbSe quantum dot is studied for the first time by ab initio density functional theory in the time-domain. The picosecond time scale of the relaxation and the absence of the phonon bottleneck are rationalized by relatively high electron and hole state densities. While many of these states show only weak optical activity, most of them participate in the electron-vibrational relaxation. Our simulations demonstrate that the slight asymmetry in the electron and hole band structure is sufficient to allow symmetry-forbidden S-P, P-S, etc. transitions, which are seen in the experimental absorption spectra. The relaxation is nonexponential, in agreement with the strongly non-Lorentzian spectral line shapes observed in experiments. The energy exchanged during individual transitions is typically greater than the characteristic phonon energy, indicating that the transitions are multiphonon. Both electrons and holes interact better with low-frequency acoustic phonons, rather than higher frequency optical modes. Holes decay only slightly faster than electrons, rendering the hole-assisted Auger relaxation pathways inefficient. This relatively symmetric vibrational relaxation of electrons and holes proceeds on a picosecond time scale, much slower than the ultrafast highly efficient carrier multiplication that was reported recently in relation to improved solar power conversion.

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