期刊
APPLIED SURFACE SCIENCE
卷 253, 期 11, 页码 5062-5066出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2006.11.013
关键词
XPS; copper alloys; semiconductor devices; interface structure; surface diffusion
Chemical composition of Cu/Ge layers deposited on a 1 mu m thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 x 10(18) cm(-3)) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface. (c) 2006 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据