Scanning electron microscopic analysis of diode laser-treated titanium implant surfaces

Objective: The objective of this study was to analyze the possible morphological alterations of the surface implants after using 980-nm diode laser irradiation (InGalAsP) at various energies. Background Data: Laser-based protocols have been proposed for decontaminating dental implant surfaces when treating peri-implantitis, although few studies have addressed this topic directly. Methods: Five smooth surface implants ( TiOblast ST, Astra Tech AB, MOlndal, Sweden) were irradiated with 980-nm diode laser, and one implant that was not lased served as the control. The surface of each implant was treated for 60 sec on implant neck to apical threads. The experiment consisted of exposing the dental titanium implants to diode laser irradiation. Then the surfaces were analyzed by scanning electron microscopy (SEM). Results: SEM analysis demonstrated any damage or alteration of titanium surfaces. Regardless of the power setting, there was no visible difference between lased and non-lased titanium surfaces after irradiation with the 980- nm diode laser. Conclusion: The results of this study suggest that the InGalAsP diode laser ( 980 nm) does not damage titanium surfaces, and seems to be safe and useful of treating peri-implantitis, irrespective of power output.