AlGaN-cladding-free nonpolar InGaN/GaN laser diodes

We demonstrate highly manufacturable nonpolar (m-plane) InGaN/GaN laser diodes without any Al-containing waveguide cladding layers. These devices utilize thick InGaN quantum wells to generate transverse optical mode confinement and can be grown and fabricated in a manner analogous to InGaN/GaN light emitting diodes. Pulsed lasing operation was demonstrated, with threshold voltages and current densities of 6.7 V and 3.7 kA/cm(2), respectively.