期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 46, 期 4A, 页码 1458-1462出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.1458
关键词
AIN; small-angle grain boundary; threading dislocation; HT-MOVPE; TEM
The growth temperature of AlN layers is one of the most important factors in metal-organic vapor phase epitaxy (MOVPE) growth. AlN layers were grown using our customized high-temperature MOVPE system. The crystalline quality was discussed on the basis of X-ray diffraction, atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements. The samples grown at a temperature of 1400 degrees C had much improved crystalline quality in terms of the X-ray rocking curve full width at half maximum values and AFM root-mean-square roughness. In addition, according to TEM analysis, edge type dislocations caused by small-angle grain boundaries were predominant under a low growth temperature, whereas these dislocations became much fewer with increasing growth temperature.
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