MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2-5 mu m and 8-12 mu m bands. Recent LWIR devices have produced detectivities as high as 8 x 10(10) Jones with a differential resistance-area product greater than 6 Ohm cm(2) at 80 K with a long wavelength cutoff of approximately 12 mu m. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11 mu m range. MWIR devices have produced detectivities as high as 8 x 10(13) Jones with a differential resistance-area product greater than 3 x 10(7) Ohm cm(2) at 80 K with a long wavelength cutoff of approximately 3.7 mu m. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3 mu m range at low temperature and increases to over 60% near room temperature. (c) 2006 Published by Elsevier B.V.