Performance projections for ballistic graphene nanoribbon field-effect transistors

The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. We calculate the bandstructure of nanoribbons using a single p(z)-orbital tight-binding method and evaluate the current-voltage characteristics of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting ribbons. a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. Our calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications.