期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 36, 期 4, 页码 277-284出版社
MINERALS METALS MATERIALS SOC
DOI: 10.1007/s11664-006-0078-0
关键词
ohmic contact; p-type 4H-SiC; work function; Ti3SiC2; interface; localized states
We have investigated the roles of interfacial reaction, work function variation, and localized states of annealed Ti/Al ohmic contacts to p-type 4H-SiC. The Al was found to be absent in the near interface region. The possibility of additional p-doping by Al indiffusion in the top SiC layer was ruled out. The work function of Ti3SiC2, the direct contact layer to SiC, was determined to be intermediate between Ti and p-SiC, leading to a considerably lowered Schottky barrier height. Reaction-induced interfacial states were observed in the near-interface SiC, which may further reduce the barrier height and cause the formation of ohmic contact.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据