期刊
DIAMOND AND RELATED MATERIALS
卷 16, 期 4-7, 页码 911-914出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2007.01.027
关键词
diamond; superconductivity; boron; MIT
Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for Tc onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films T-C onset=6.3 K and T-C zero=3.2 K were significantly suppressed. (C) 2007 Elsevier B.V. All rights reserved.
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