The authors report topography-free material contrast imaging on a nanofabricated boron-doped silicon sample measured with a near-field scanning microwave microscope over a broad frequency range. The boron doping was performed using the focus ion beam technique on a silicon wafer with nominal resistivity of 61 Omega cm. A topography-free doped region varies in sheet resistance from 1000 Omega/square to about 400 k Omega/square within a lateral distance of 4 mu m. The qualitative spatial resolution in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift signal. (c) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据