Ni-doped TaSi2 nanowires were synthesized by annealing NiSi2 film as the mediated layer in a Ta reductive ambient at 950 degrees C for 16 h. The hysteresis loop has a hard magnetization axis and high remanence with a coercive force of 120 Oe when the applied magnetic field is perpendicular to the substrate ( parallel to the nanowires) and the hysteresis loop has an easy magnetization axis and low remanence with a coercive force of about 95 Oe when the applied magnetic field is parallel to the substrate ( perpendicular to the nanowires). The elastic modulus of the nanowires was measured to be 170-485 GPa.
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