期刊
BIOSENSORS & BIOELECTRONICS
卷 22, 期 9-10, 页码 2108-2114出版社
ELSEVIER ADVANCED TECHNOLOGY
DOI: 10.1016/j.bios.2006.09.025
关键词
DNA sensors; silicon nitride; hybridization kinetic; dsDNA; cDNA
Ion sensitive field effect transistors (ISFET) are candidates for a new generation of fully electrical DNA sensors. To this purpose, we have modified ISFET sensors by adsorbing on their Si3N4 surface poly-L-lysine and single (as well as double) stranded DNA. Once coupled to an accurate model of the oppositely charged layers adsorbed on the surface, the proposed sensor allows quantitatively evaluating the adsorbed molecules densities, as well as estimating DNA hybridization kinetics. (c) 2006 Published by Elsevier B.V.
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