The defects in single-wall carbon nanotubes irradiated with a 248 nm pulsed excimer laser were studied using Raman spectroscopy. The thermal relaxation kinetics of the laser-induced defects was examined at sample temperatures from 296 to 698 K. Two relaxation processes are revealed; one is the fast process with an activation energy of 0.4 eV and the other is the slow process with an activation energy of 0.7 eV. These two processes can correspond to vacancy-interstitial recombination and vacancy migration along the tube axis, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据