Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

Exceptionally low-voltage operation of organic ferroelectric capacitors and diodes was demonstrated. Ferroelectric polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films were prepared by the solvent-cast method. Metal-ferroelectric-metal capacitors with 60-nm-thick P(VDF-TrFE) films exhibited well-saturated hysteresis curves whose coercive voltage (V-c) and remanent polarization (P-r) were 2.0 V and 11.9 mu C/cm(2), respectively. The authors also fabricated metal-ferroelectric-insulator-semiconductor diodes with 100-nm-thick P(VDF-TrFE) films. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops were obtained with a voltage sweep range narrower than 5 V. The maximum memory window of 4.7 V was achieved. (C) 2007 American Institute of Physics.