期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 129, 期 15, 页码 4532-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja070875e
关键词
-
资金
- National Research Foundation of Korea [2006-214-D00061] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 mu F/cm(2) at 10 Hz and 2 mu F/cm(2) at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (> 100 Hz).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据