4.8 Article

Ion gel gated polymer thin-film transistors

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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 129, 期 15, 页码 4532-+

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AMER CHEMICAL SOC
DOI: 10.1021/ja070875e

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  1. National Research Foundation of Korea [2006-214-D00061] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 mu F/cm(2) at 10 Hz and 2 mu F/cm(2) at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (> 100 Hz).

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