Reproducible unipolar resistance switching in stoichiometric ZrO2 films

The resistance switching characteristics of stoichiometric ZrO2 film were investigated for nonvolatile memory. The Al/ZrO2/Al device presents reliable and reproducible switching behaviors. The on/off ratio of two stable states is larger than 2x10(3). It is suggested that the current-voltage characteristics are governed by the Schottky conduction mechanism in high voltage region, while the filament conduction is suggested in low voltage region. The switching process is explained in terms of the spontaneous reversible reaction between electrode and ZrO2 films with the contribution of Joule heating effect by the external current. It provides a possible solution for low device yield of nonstoichiometric oxides. (c) 2007 American Institute of Physics.