Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids

The selective quantum dot (QD) nucleation on nanofaceted GaAs pyramidal facets is explored. The GaAs pyramids, formed on a SiO2 masked (001) GaAs substrate, are characterized by well-defined equilibrium crystal shapes (ECSs) defined by three crystal plane families including {11n}, {10n}, and (001). Subsequent patterned QD (PQD) nucleation on the GaAs pyramidal facets is highly preferential towards the (11n) planes due to superior energy minimization. The GaAs pyramid ECS and PQDs are examined using high-resolution scanning electron microscopy and room temperature photoluminescence. (c) 2007 American Institute of Physics.