期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 19, 期 9-12, 页码 813-815出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2007.897291
关键词
GaN; leakage currents; light-emitting diodes (LEDs); light output power; selective wet etching
In an attempt to enhance the reliability of GaN-based light-emitting diodes (LEDs), the selective wet chemical etching of p-GaN surface in the GaN-based LEDs using KOH+ NaOH in an ethylene glycol solution was investigated. The leakage currents of the etched LED under forward and reverse bias voltages were much lower, compared to those of a nonetched LED. The etched LED also showed improved light extraction efficiency and the degradation rate of light output power at a high injection current of 300 mA was slower than that for a nonetched LED. These results can be attributed to a decrease in the surface defects, an increase in hole concentration, and the increased surface roughness of the etched p-GaN.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据