GEANT4 simulation of electron energy deposition in extended media

The present work demonstrates that GEANT4 yields a consistent description of electron transport processes in semi-infinite homogeneous and heterogeneous extended media. This comparison covers the e(-) energy deposition profiles in a range of elements from aluminum to tantalum through molybdenum at source energies from 0.3 to 1.0 MeV and at incident angles from 0 degrees to 60 degrees. The good agreement between simulation results and data confirms that the Monte Carlo used code is capable of accurate electron beam energy deposition calculation even under such conditions. (c) 2007 Elsevier B.V. All rights reserved.